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VISHAY SI7956DP-T1-GE3 product image
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VISHAY SI7956DP-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SI7956DP-T1-GE3
LCSC Part #
C222413
Packaging
PowerPAK-SO-8
Customer #
Key Attributes
4.1A 115mΩ@6V 3.5W 4V 2 N-Channel PowerPAK-SO-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SI7956DP-T1-GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.5482$ 3.55
10+$ 3.4897$ 34.90
30+$ 3.4508$ 103.52
100+$ 3.4118$ 341.18
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingPowerPAK-SO-8
Current - Continuous Drain(Id)4.1A
RDS(on)115mΩ@6V
Pd - Power Dissipation3.5W
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage150V
TypeN-Channel
Number2 N-Channel
Gate Charge(Qg)26nC@10V
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Features

AI Translation
  • Halogen-free per IEC 61249-2-21
  • TrenchFET power MOSFET
  • Low on-resistance in new low thermal resistance PowerPAK package
  • Dual MOSFET design, space-saving
  • 100% gate resistance (Rg) tested

Applications

AI Translation
  • High-efficiency primary-side switch
  • Half-bridge and forward converters