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ST STD2N80K5RoHS

Manufacturer
ST
MPN
STD2N80K5
LCSC Part #
C222162
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
800V 2A 5V 45W 4.5Ω@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS
Datasheetpdf iconST STD2N80K5
In-Stock: 36
36 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.2345$ 1.23
10+$ 1.0309$ 10.31
30+$ 0.9186$ 27.56
100+$ 0.7915$ 79.15
500+$ 0.7345$ 367.25
1,000+$ 0.7101$ 710.10
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252-2(DPAK)
Drain to Source Voltage800V
Output Capacitance(Coss)8pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)105pF
Gate Charge(Qg)5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

AI Translation
  • Industry’s lowest RDS(on) * area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications