LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
ST STN3N45K3 product image
  • STN3N45K3 thumbnail 1
  • STN3N45K3 thumbnail 2
  • STN3N45K3 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STN3N45K3RoHS

Manufacturer
ST
MPN
STN3N45K3
LCSC Part #
C222083
Packaging
SOT-223
Customer #
Key Attributes
450V 600mA 4.5V 3W 4Ω@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STN3N45K3
In-Stock: 2,350
2,350 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3347$ 1.67
50+$ 0.2613$ 13.07
150+$ 0.2298$ 34.47
500+$ 0.1905$ 95.25
2,500+$ 0.173$ 432.50
4,000+$ 0.1625$ 650.00
Standard Packaging4000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingSOT-223
Drain to Source Voltage450V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)600mA
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)164pF
Gate Charge(Qg)9.5nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This SuperMESH 3™ power MOSFET is the result of improvements to STMicroelectronics' SuperMESH 3™ technology, combined with a newly optimized vertical structure. The device features ultra-low on-resistance, excellent dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.

Features

AI Translation
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Minimized gate charge
  • Ultra-low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener protection

Applications

AI Translation
  • Switching applications