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Infineon IRF7341TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7341TRPBF
LCSC Part #
C21791
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH ARR 55V 4.7A SO-8
Datasheetpdf iconInfineon IRF7341TRPBF
In-Stock: 913
913 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4346$ 0.43
10+$ 0.3516$ 3.52
30+$ 0.3158$ 9.47
100+$ 0.2719$ 27.19
500+$ 0.2002$ 100.10
1,000+$ 0.1872$ 187.20
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage55V
Current - Continuous Drain(Id)4.7A
Pd - Power Dissipation2W
RDS(on)50mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)71pF
Number2 N-Channel
Input Capacitance(Ciss)740pF
Gate Charge(Qg)36nC
Operating Temperature-55℃~+150℃
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Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO - 8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple - die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Features

AI Translation
  • Generation V Technology
  • Ultra Low On - Resistance
  • Dual N - Channel Mosfet Surface Mount
  • Available in Tape & Reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead - Free