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ElecSuper IRFB3607PBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRFB3607PBF-ES
LCSC Part #
C21713864
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 68V 80A TO-220AB
Datasheetpdf iconElecSuper IRFB3607PBF-ES
In-Stock: 165
165 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2288$ 1.14
50+$ 0.1814$ 9.07
150+$ 0.1611$ 24.17
500+$ 0.1357$ 67.85
2,500+$ 0.1245$ 311.25
5,000+$ 0.1177$ 588.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-220AB
Drain to Source Voltage68V
Output Capacitance(Coss)266pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation147W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.065nF
Gate Charge(Qg)35nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

IRFB3607PBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRFB3607PBF-ES is lead-free.

Features

AI Translation
  • 68V, RDS(ON) = 6.6 mΩ (typical) @ VGS = 10 V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Material: Halogen-free
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion