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NCE NCE2003 product image
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NCE NCE2003RoHS

Manufacturer
NCEAsian Brands
MPN
NCE2003
LCSC Part #
C216792
Packaging
SOT-23-6L
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V 3A SOT-23-6L
Datasheetpdf iconNCE NCE2003
In-Stock: 1,650
1,650 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1093$ 0.55
50+$ 0.0845$ 4.23
150+$ 0.0721$ 10.82
500+$ 0.0628$ 31.40
3,000+$ 0.0554$ 166.20
6,000+$ 0.0517$ 310.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingSOT-23-6L
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)100mΩ@2.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)5nC@4.5V
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

NCE2003 adopts advanced trench technology, offering excellent RDS(ON) and low gate charge. Complementary MOSFETs can be used to build level-shifting high-side switches and numerous other applications.

Features

AI Translation
  • N-Channel
  • VDS = 20V, ID = 3A
  • RDS(ON) < 35mΩ at VGS = 4.5V
  • RDS(ON) < 55mΩ at VGS = 2.5V
  • P-Channel
  • VDS = -20V, ID = -3A
  • RDS(ON) < 75mΩ at VGS = -4.5V
  • RDS(ON) < 100mΩ at VGS = -2.5V
  • High power and current handling capability
  • Lead-free
  • Surface mount package