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Infineon IGI60F2020A1LAUMA1 product image
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Infineon IGI60F2020A1LAUMA1RoHS

Manufacturer
MPN
IGI60F2020A1LAUMA1
LCSC Part #
C21615397
Packaging
QFN-28(8x8)
Customer #
Key Attributes
Half-Bridge 1A 6ns 5ns 2A QFN-28(8x8) Full Half-Bridge (H Bridge) Drivers RoHS
Datasheetpdf iconInfineon IGI60F2020A1LAUMA1

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Full Half-Bridge (H Bridge) Drivers
ManufacturerInfineon
PackagingQFN-28(8x8)
Driven ConfigurationHalf-Bridge
Load Type-
Input Logic Level - High1.7V~2.3V
Current - Output High(IOH)1A
Rise Time6ns
Fall Time5ns
Propagation Delay tpLH-;-
Current - Output Low(IOL)2A
Operating Temperature-40℃~+125℃
FeaturesUnder Voltage Protection;Enable shutdown
Quiescent Current-
Voltage - Supply5.5V~12V
Input Logic Level - Low-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

IGI60F2020A1L combines a half-bridge power stage consisting of two 200 mΩ (typ. Rdson) / 600 V enhancement - mode CoolGaN HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN - 28 package. In the low - to - medium power area it is thus ideally suited to support the design of high - density AC/DC chargers and adapters utilizing the superior switching behavior of CoolGaN HEMTs. CoolGaN and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on - resistance Rdson is always guaranteed. Due to the GaN - specific low threshold voltage and the fast switching transients, a negative gate drive voltage is required in certain applications to both enable fast turn - off and avoid cross - conduction effects. This can be achieved by the well - known RC interface between driver and switch. A few external SMD resistors and caps enable easy adaptation to different power topologies. The driver utilizes on - chip coreless transformer technology (CT) to achieve signal level - shifting to the high - side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

Features

AI Translation
  • Two 200 mΩ GaN switches in half - bridge configuration with dedicated high - and low - side isolated gate drivers
  • Source / sink driving current up to 1 / 2 A
  • Application - configurable turn - on and turn - off speed
  • Fast input - to - output propagation (typ. 47 ns) with extremely small channel - to - channel mismatch
  • PWM input signal (switching frequency up to 3 MHz)
  • Standard logic input levels compatible with digital controllers
  • Wide supply range
  • Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery
  • Low - side open source for current sensing with external shunt resistor
  • Galvanic input - to - output isolation based on robust coreless transformer technology
  • Gate driver with very high common mode transient immunity (CMTI)>300 V/ns
  • Thermally enhanced 8×8 mm QFN - 28 package
  • Product is fully qualified acc. to JEDEC for Industrial Applications

Applications

AI Translation
  • Charger and adaptors
  • Server, telecom & networking SMPS
  • Low power motor drive
  • LED lighting
In-Stock: 56
56 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 8.3019$ 8.30
10+$ 8.1175$ 81.18
30+$ 7.9961$ 239.88
100+$ 7.8731$ 787.31
Standard Packaging3000/Full Reel
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