Infineon IGI60F2020A1LAUMA1
| Manufacturer | |
| MPN | IGI60F2020A1LAUMA1 |
| LCSC Part # | C21615397 |
| Packaging | QFN-28(8x8) |
| Customer # | |
| Key Attributes | Half-Bridge 1A 6ns 5ns 2A QFN-28(8x8) Full Half-Bridge (H Bridge) Drivers RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Full Half-Bridge (H Bridge) Drivers | |
| Manufacturer | Infineon | |
| Packaging | QFN-28(8x8) | |
| Driven Configuration | Half-Bridge | |
| Load Type | - | |
| Input Logic Level - High | 1.7V~2.3V | |
| Current - Output High(IOH) | 1A | |
| Rise Time | 6ns | |
| Fall Time | 5ns | |
| Propagation Delay tpLH | -;- | |
| Current - Output Low(IOL) | 2A | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Under Voltage Protection;Enable shutdown | |
| Quiescent Current | - | |
| Voltage - Supply | 5.5V~12V | |
| Input Logic Level - Low | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
IGI60F2020A1L combines a half-bridge power stage consisting of two 200 mΩ (typ. Rdson) / 600 V enhancement - mode CoolGaN HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN - 28 package. In the low - to - medium power area it is thus ideally suited to support the design of high - density AC/DC chargers and adapters utilizing the superior switching behavior of CoolGaN HEMTs. CoolGaN and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on - resistance Rdson is always guaranteed. Due to the GaN - specific low threshold voltage and the fast switching transients, a negative gate drive voltage is required in certain applications to both enable fast turn - off and avoid cross - conduction effects. This can be achieved by the well - known RC interface between driver and switch. A few external SMD resistors and caps enable easy adaptation to different power topologies. The driver utilizes on - chip coreless transformer technology (CT) to achieve signal level - shifting to the high - side. Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.
Features
- Two 200 mΩ GaN switches in half - bridge configuration with dedicated high - and low - side isolated gate drivers
- Source / sink driving current up to 1 / 2 A
- Application - configurable turn - on and turn - off speed
- Fast input - to - output propagation (typ. 47 ns) with extremely small channel - to - channel mismatch
- PWM input signal (switching frequency up to 3 MHz)
- Standard logic input levels compatible with digital controllers
- Wide supply range
- Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery
- Low - side open source for current sensing with external shunt resistor
- Galvanic input - to - output isolation based on robust coreless transformer technology
- Gate driver with very high common mode transient immunity (CMTI)>300 V/ns
- Thermally enhanced 8×8 mm QFN - 28 package
- Product is fully qualified acc. to JEDEC for Industrial Applications
Applications
- Charger and adaptors
- Server, telecom & networking SMPS
- Low power motor drive
- LED lighting
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 8.3019 | $ 8.30 |
| 10+ | $ 8.1175 | $ 81.18 |
| 30+ | $ 7.9961 | $ 239.88 |
| 100+ | $ 7.8731 | $ 787.31 |
Standard Packaging3000/Full Reel | ||
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |

