Rochester Electronics TN28F020-150

The Intel 5 Volt Bulk Erase CMos flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 add electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-board during subassembly test; in-system during final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Similarly, the 28F020 is a 2048 kilobit nonvolatil memory organized as 262,144 bytes of eight bits. Both devices are offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs. Extended erase and program cycling capability is designed into Intel ETOXTM (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V Vpp supply, the 28F010 and 28F020 perform 100,000 erase and program cycles—well within the time limits of the quickpulse programming and quick-erase algorithms. The Intel 28F010 and 28F020 employ advanced CMOS circuitry for systems requiring high-performance access speeds, low power consumption, and immunity to noise. Its 90 ns access time provides zero waitstate performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 μA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPl processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from -1 V to Vcc +1 V. With Intel ETOX process technology base, the 28F010 and 28F020 build on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.

• Flash Electrical Chip-Erase 1-Mbit: 1 Second Typical Chip-Erase 2-Mbit: 2 Second Typical Chip-Erase
• Quick-Pulse Programming Algorithm 10 μs Typical Byte-Program 1-Mbit: 1 Second Chip-Program 2-Mbit: 2 Second Chip-Program
• 100,000 Erase/Program Cycles
• 12.0 V ±5% Vpp
• High-Performance Read — 90 ns Maximum Access Time
• CMos Low Power Consumption 10 mA Typical Active Current 50 μA Typical Standby Current
• 0 Watts Data Retention
• Power Integrated Program/Erase Stop Timer
• Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
• Noise Immunity Features
• ±1 V% Vcc Tolerance
• Maximum Latch-Up Immunity through EPl Processing
• ETOxTM Nonvolatile Flash Technology
• EPROM-Compatible Process Base High-Volume Manufacturing Experience
• JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP
• Extended Temperature Options