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WILLSEMI WPM2015-3/TR product image
  • WPM2015-3/TR thumbnail 1
  • WPM2015-3/TR thumbnail 2
  • WPM2015-3/TR thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
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WILLSEMI WPM2015-3/TRRoHS

Manufacturer
WILLSEMIAsian Brands
MPN
WPM2015-3/TR
LCSC Part #
C213159
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 2.4A SOT-23
Datasheetpdf iconWILLSEMI WPM2015-3/TR
Not available now

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerWILLSEMI
PackagingSOT-23
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))810mV
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)110mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)534pF
Gate Charge(Qg)7.3nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The WPM2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2015 is Pb-free and Halogen-free.

Features

AI Translation
  • Trench Technology
  • Supper high density cell design
  • Excellent ON resistance for higher DC current
  • Extremely Low Threshold Voltage
  • Small package SOT-23

Applications

AI Translation
  • Driver for Relay, Solenoid, Motor, LED etc.
  • DC-DC converter circuit
  • Power Switch
  • Load Switch
  • Charging