DIODES ZXMN3B01FTA
| Manufacturer | |
| MPN | ZXMN3B01FTA |
| LCSC Part # | C212304 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 625mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 258pF | |
| Gate Charge(Qg) | 2.93nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation of Trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
AI Translation
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Applications
AI Translation
- DC-DC Converters
- Power Management functions
- Disconnect switches
- Motor control
In-Stock: 10,210
10,210 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1483 | $ 0.74 |
| 50+ | $ 0.115 | $ 5.75 |
| 150+ | $ 0.1007 | $ 15.11 |
| 500+ | $ 0.0829 | $ 41.45 |
| 3,000+ | $ 0.0749 | $ 224.70 |
| 6,000+ | $ 0.0702 | $ 421.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 625mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 150mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 258pF | |
| Gate Charge(Qg) | 2.93nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This new generation of Trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Features
AI Translation
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT23 package
Applications
AI Translation
- DC-DC Converters
- Power Management functions
- Disconnect switches
- Motor control
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



