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Infineon IRFZ34NPBFRoHS

Manufacturer
Infineon
MPN
IRFZ34NPBF
LCSC Part #
C21066
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 55V 29A TO-220AB
Datasheetpdf iconInfineon IRFZ34NPBF
In-Stock: 17,490
17,490 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3689$ 1.84
50+$ 0.27$ 13.50
150+$ 0.2372$ 35.58
500+$ 0.1963$ 98.15
2,000+$ 0.1781$ 356.20
5,000+$ 0.1672$ 836.00
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage55V
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Ease of Paralleling