VBsemi Elec FQPF1N60-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FQPF1N60-VB |
| LCSC Part # | C20755721 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 2A TO-220F |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
In-Stock: 3
3 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5303$ 0.4508 | $ 0.45 |
| 10+ | $ 0.416$ 0.3536 | $ 3.54 |
| 50+ | $ 0.3668$ 0.3118 | $ 15.59 |
| 100+ | $ 0.3065$ 0.2606 | $ 26.06 |
| 500+ | $ 0.2795$ 0.2376 | $ 118.80 |
| 1,000+ | $ 0.2636$ 0.2241 | $ 224.10 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220F | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 11nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



