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ADI SSM2212RZ-R7
| Manufacturer | |
| MPN | SSM2212RZ-R7 |
| LCSC Part # | C207512 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | TRANS NPN 40V 20mA SO-8 |
| Datasheet |  ADI SSM2212RZ-R7 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | ADI | |
| Packaging | SO-8 | |
| Current - Collector Cutoff | 500pA | |
| DC Current Gain | 300 | |
| Collector - Emitter Voltage VCEO | 40V | |
| Pd - Power Dissipation | - | |
| Transition frequency(fT) | 200MHz | |
| Vce Saturation(VCE(sat)) | 200mV | |
| type | NPN | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 20mA | |
| Operating Temperature | -40℃~+85℃ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at Ic = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce highorder amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of -40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
Features
- Very low voltage noise: 1 nV/√Hz maximum at 100 Hz
- Excellent current gain match: 0.5%
- Low offset voltage (Vos): 200 μv maximum (SOIC)
- Outstanding offset voltage drift: 0.03 μV/°C
- High gain bandwidth product: 200 MHz
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 10.8003 | $ 10.80 |
| 10+ | $ 9.4081 | $ 94.08 |
| 30+ | $ 8.5594 | $ 256.78 |
| 100+ | $ 7.8471 | $ 784.71 |
Standard Packaging1000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays | |
| Manufacturer | ADI | |
| Packaging | SO-8 | |
| Current - Collector Cutoff | 500pA | |
| DC Current Gain | 300 | |
| Collector - Emitter Voltage VCEO | 40V | |
| Pd - Power Dissipation | - | |
| Transition frequency(fT) | 200MHz | |
| Vce Saturation(VCE(sat)) | 200mV | |
| type | NPN | |
| Number | 2 NPN | |
| Current - Collector(Ic) | 20mA | |
| Operating Temperature | -40℃~+85℃ |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at Ic = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce highorder amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of -40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
Features
- Very low voltage noise: 1 nV/√Hz maximum at 100 Hz
- Excellent current gain match: 0.5%
- Low offset voltage (Vos): 200 μv maximum (SOIC)
- Outstanding offset voltage drift: 0.03 μV/°C
- High gain bandwidth product: 200 MHz
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |