TI LM5104MX/NOPB
| Manufacturer | |
| MPN | LM5104MX/NOPB |
| LCSC Part # | C206493 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | High-Voltage Half-Bridge Gate Driver With Adaptive Delay |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | TI | |
| Packaging | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 400uA | |
| Input Logic Level - High | - | |
| Operating Temperature | -40℃~+125℃ | |
| Voltage - Supply | 9V~14V | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 1.8A | |
| Rise Time | 600ns | |
| Fall Time | 15ns | |
| Features | Under Voltage Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode | |
| Current - Output High(IOH) | 1.6A | |
| Load Type | MOSFET |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.
Features
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Adaptive Rising and Falling Edges With Programmable Additional Delay
- Single Input Control
- Bootstrap Supply Voltage Range up to 118-V DC
- Fast Turnoff Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads With 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- SOIC and WSON-10 4-mm × 4-mm Package
Applications
- Current Fed Push-Pull Power Converters
- High Voltage Buck Regulators
- Active Clamp Forward Power Converters
- Half-Bridge and Full-Bridge Converters
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.7344 | $ 2.73 |
| 10+ | $ 2.2938 | $ 22.94 |
| 30+ | $ 2.0175 | $ 60.53 |
| 100+ | $ 1.7346 | $ 173.46 |
| 500+ | $ 1.6078 | $ 803.90 |
| 1,000+ | $ 1.5525 | $ 1552.50 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | TI | |
| Packaging | SOIC-8 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 400uA | |
| Input Logic Level - High | - | |
| Operating Temperature | -40℃~+125℃ | |
| Voltage - Supply | 9V~14V | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 1.8A | |
| Rise Time | 600ns | |
| Fall Time | 15ns | |
| Features | Under Voltage Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode | |
| Current - Output High(IOH) | 1.6A | |
| Load Type | MOSFET |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.
Features
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Adaptive Rising and Falling Edges With Programmable Additional Delay
- Single Input Control
- Bootstrap Supply Voltage Range up to 118-V DC
- Fast Turnoff Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads With 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- SOIC and WSON-10 4-mm × 4-mm Package
Applications
- Current Fed Push-Pull Power Converters
- High Voltage Buck Regulators
- Active Clamp Forward Power Converters
- Half-Bridge and Full-Bridge Converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



