micron MT28EW01GABA1LJS-0SIT
| Manufacturer | |
| MPN | MT28EW01GABA1LJS-0SIT |
| LCSC Part # | C2064354 |
| Packaging | TSOP-56-18.4mm |
| Customer # | |
| Key Attributes | Embedded Parallel NOR |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | micron | |
| Packaging | TSOP-56-18.4mm | |
| Voltage - Supply | 2.7V~3.6V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+85℃ | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Features | Hardware write protection;Software write protection;Power-on reset | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(128KB) | |
| Page Programming Time (Tpp) | - | |
| Interface | Parallel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1600 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Single-level cell (SLC) process technology
- Density: 1Gb
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 * VCC (I/O buffers)
- Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.7 - 3.6V) – Random access: 100ns (VCCQ = 1.65 - VCC)
- Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
- Word/Byte program: 25us per word (TYP)
- Block erase (128KB): 0.2s (TYP)
- Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus
- Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
- Unlock bypass, block erase, chip erase, and write to buffer capability
- BLANK CHECK operation to verify an erased block
- CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
- VPP/WP# protection – Protects first or last block regardless of block protection settings
- Software protection – Volatile protection – Nonvolatile protection – Password protection
- Extended memory block – 128-word (256-byte) block for permanent, secure identification – Programmed or locked at the factory or by the customer
- JESD47-compliant – 100,000 (minimum) ERASE cycles per block – Data retention: 20 years (TYP)
- Package – 56-pin TSOP, 14 x 20mm (JS) – 64-ball LBGA, 11 x 13mm (PC)
- RoHS-compliant, halogen-free packaging
- Operating temperature – Ambient: -40℃ to +85℃
In-Stock: 42
42 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 15.7399 | $ 15.74 |
| 10+ | $ 14.9896 | $ 149.90 |
| 30+ | $ 13.6908 | $ 410.72 |
| 100+ | $ 12.5565 | $ 1255.65 |
Standard Packaging1600/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | micron | |
| Packaging | TSOP-56-18.4mm | |
| Voltage - Supply | 2.7V~3.6V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+85℃ | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Features | Hardware write protection;Software write protection;Power-on reset | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 200ms@(128KB) | |
| Page Programming Time (Tpp) | - | |
| Interface | Parallel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1600 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Single-level cell (SLC) process technology
- Density: 1Gb
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 * VCC (I/O buffers)
- Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.7 - 3.6V) – Random access: 100ns (VCCQ = 1.65 - VCC)
- Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH)
- Word/Byte program: 25us per word (TYP)
- Block erase (128KB): 0.2s (TYP)
- Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus
- Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
- Unlock bypass, block erase, chip erase, and write to buffer capability
- BLANK CHECK operation to verify an erased block
- CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
- VPP/WP# protection – Protects first or last block regardless of block protection settings
- Software protection – Volatile protection – Nonvolatile protection – Password protection
- Extended memory block – 128-word (256-byte) block for permanent, secure identification – Programmed or locked at the factory or by the customer
- JESD47-compliant – 100,000 (minimum) ERASE cycles per block – Data retention: 20 years (TYP)
- Package – 56-pin TSOP, 14 x 20mm (JS) – 64-ball LBGA, 11 x 13mm (PC)
- RoHS-compliant, halogen-free packaging
- Operating temperature – Ambient: -40℃ to +85℃
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



