Lewa Micro LWT1H10AM

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Lewa Micro
Packaging	SOT-23
Output Capacitance(Coss)	12.7pF
Pd - Power Dissipation	950mW
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	1A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.8V
Reverse Transfer Capacitance (Crss@Vds)	0.9pF
RDS(on)	450mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	33.7pF
Gate Charge(Qg)	2.01nC@10V
Vgs	±12V
Type	N-Channel

In-Stock: 2,260

2,260 In stock, ships now

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Qty	Unit Price	Total Amount
20+	$ 0.0319	$ 0.64
200+	$ 0.0249	$ 4.98
600+	$ 0.021	$ 12.60
3,000+	$ 0.0186	$ 55.80
9,000+	$ 0.0166	$ 149.40
21,000+	$ 0.0155	$ 325.50
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Lewa Micro
Packaging	SOT-23
Output Capacitance(Coss)	12.7pF
Pd - Power Dissipation	950mW
Configuration	Standalone
Drain to Source Voltage	100V
Current - Continuous Drain(Id)	1A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.8V
Reverse Transfer Capacitance (Crss@Vds)	0.9pF
RDS(on)	450mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	33.7pF
Gate Charge(Qg)	2.01nC@10V
Vgs	±12V
Type	N-Channel