LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
VBsemi Elec SIR424DP-T1-GE3-VB product image
  • SIR424DP-T1-GE3-VB thumbnail 1
  • SIR424DP-T1-GE3-VB thumbnail 2
  • SIR424DP-T1-GE3-VB thumbnail 3
  • Pinout
  • Footprint
Images for reference only

VBsemi Elec SIR424DP-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SIR424DP-T1-GE3-VB
LCSC Part #
C20626295
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 30V 160A DFN5x6-8
Datasheetpdf iconVBsemi Elec SIR424DP-T1-GE3-VB
In-Stock: 40
40 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9953$ 1.00
10+$ 0.8014$ 8.01
30+$ 0.7053$ 21.16
100+$ 0.6091$ 60.91
500+$ 0.5511$ 275.55
1,000+$ 0.5221$ 522.10
Standard Packaging5000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN5x6-8
Drain to Source Voltage30V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)2.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)9.9nF
Gate Charge(Qg)82nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Features

AI Translation
  • TrenchFET Power MOSFET 100 % Rg and UIS Tested

Applications

AI Translation
  • OR-ing Server
  • N-Channel MOSFET