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Minos IRFB3077RoHS

Manufacturer
MinosAsian Brands
MPN
IRFB3077
LCSC Part #
C20624237
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 80V 200A TO-220
Datasheetpdf iconMinos IRFB3077
In-Stock: 51
51 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9039$ 0.90
10+$ 0.728$ 7.28
50+$ 0.64$ 32.00
100+$ 0.5521$ 55.21
500+$ 0.5$ 250.00
1,000+$ 0.4723$ 472.30
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMinos
PackagingTO-220
Drain to Source Voltage80V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)810pF
RDS(on)4mΩ@10V
Number1 N-channel
Gate Charge(Qg)257nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The IRFB3077 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 80V, ID = 200A, RDS(ON) < 4mΩ @ VGS = 10V
  • High density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applications

AI Translation
  • Power switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply