Minos IRFB4410Z
| Manufacturer | MinosAsian Brands |
| MPN | IRFB4410Z |
| LCSC Part # | C20624235 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 110A TO-220 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 110A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.05nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRFB4410Z uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 100V, ID = 110A, RDS(ON) < 8mΩ @ VGS = 10V
- High density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Applications
AI Translation
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
In-Stock: 572
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5438$ 0.5167 | $ 0.52 |
| 10+ | $ 0.4319$ 0.4104 | $ 4.10 |
| 50+ | $ 0.3775$ 0.3587 | $ 17.94 |
| 100+ | $ 0.3231$ 0.3070 | $ 30.70 |
| 500+ | $ 0.2895$ 0.2751 | $ 137.55 |
| 1,000+ | $ 0.2735$ 0.2599 | $ 259.90 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Minos | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 480pF | |
| Current - Continuous Drain(Id) | 110A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 230W | |
| Reverse Transfer Capacitance (Crss@Vds) | 420pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.05nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRFB4410Z uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 100V, ID = 110A, RDS(ON) < 8mΩ @ VGS = 10V
- High density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Applications
AI Translation
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



