LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
micron MT25QL01GBBB8ESF-0SIT product image
  • MT25QL01GBBB8ESF-0SIT thumbnail 1
  • MT25QL01GBBB8ESF-0SIT thumbnail 2
  • MT25QL01GBBB8ESF-0SIT thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

micron MT25QL01GBBB8ESF-0SITRoHS

Manufacturer
micron
MPN
MT25QL01GBBB8ESF-0SIT
LCSC Part #
C2061920
Packaging
SO-16-300mil
Customer #
Key Attributes
1Gb, 3V Multiple I/O Serial Flash Memory
Datasheetpdf iconmicron MT25QL01GBBB8ESF-0SIT

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturermicron
PackagingSO-16-300mil
Voltage - Supply2.7V~3.6V
Memory Size1Gbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
FeaturesWrite enable latch;Hardware write protection;Software write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Page Programming Time (Tpp)1.8ms
InterfaceSPI
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • Stacked device (two 512Mb die)
  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR)
  • Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
  • Dual/quad I/O commands for increased throughput up to 90 MB/s
  • Supported protocols: Extended, Dual and Quad I/O both STR and DTR
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations
  • Volatile and nonvolatile configuration settings
  • Software reset
  • Additional reset pin for selected part numbers
  • 3-byte and 4-byte address modes – enable memory access beyond 128Mb
  • Dedicated 64-byte OTP area outside main memory – Readable and user-lockable
  • Erase capability – Die Erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
  • Erase performance: 400KB/sec (64KB sector)
  • Erase performance: 80KB/sec (4KB sub-sector)
  • Program performance: 2MB/sec
  • Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
  • Electronic signature – JEDEC-standard 3-byte signature (BA21h) – Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
In-Stock: 152
152 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 40.8554$ 40.86
30+$ 39.6655$ 1189.97
Standard Packaging1000/Full Reel
Better price for more quantity?
$