LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
MICROCHIP 25LC128T-E/SN product image
Images for reference only

MICROCHIP 25LC128T-E/SNRoHS

Manufacturer
MPN
25LC128T-E/SN
LCSC Part #
C2061662
Packaging
SOIC-8
Customer #
Key Attributes
128K SPI Bus Serial EEPROM
Datasheetpdf iconMICROCHIP 25LC128T-E/SN
In-Stock: 29
29 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.5567$ 1.56
10+$ 1.3217$ 13.22
30+$ 1.1738$ 35.21
100+$ 1.0228$ 102.28
500+$ 0.9543$ 477.15
1,000+$ 0.9247$ 924.70
Standard Packaging3300/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerMICROCHIP
PackagingSOIC-8
Voltage - Supply2.5V~5.5V
Memory Size128Kbit
Operating temperature-40℃~+125℃
Clock Frequency10MHz
FeaturesHardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3300
Sales UnitPiece

Introduction

AI Translation

The 25AA128/25LC128 (25xx128) are 128-Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Features

AI Translation
  • Maximum Clock: 10 MHz
  • Low-Power CMOS Technology
  • Write current (maximum): 5 mA at 5.5V, 10 MHz
  • Read current: 5 mA at 5.5V, 10 MHz
  • Standby current: 5 μA at 5.5V
  • 16,384x8 -Bit Organization
  • 64-Byte Page
  • Self-Timed Erase and Write Cycles (5 ms maximum)
  • Block Write Protection: Protect none, 1/4, 1/2 or all of array
  • Built-ln Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
  • Sequential Read
  • High Reliability: Endurance: 1,000,000 erase/write cycles, Data retention: >200 years, ESD protection: >4000 V
  • RoHS Compliant
  • Temperature Ranges: Industrial (I): -40℃ to +85℃, Extended (E): -40℃ to +125℃
  • Automotive AEC-Q100 Qualified