ST M95080-DRMN8TP/K

The M95080-DRE is a 8-Kbit serial EEPROM device operating up to 105 ℃. It is compliant with the level of reliability defined by the AEC-Q100 grade 2. The device is accessed by a simple serial SPI compatible interface running up to 20 MHz. The memory array is based on advanced true EEPROM technology (Electrically Erasable PROgrammable Memory). The M95080-DRE is a byte-alterable memory (1024x8 bits) organized as 32 pages of 32 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic. The M95080-DRE offers an additional Identification Page (32 bytes) in which the ST device identification can be read. This page can also be used to store sensitive application parameters.

• Compatible with the Serial Peripheral Interface (SPI) bus
• Memory array – 8 Kbit (1 Kbyte) of EEPROM – Page size: 32 bytes – Write protection by block: 1/4, 1/2 or whole memory – Additional Write lockable Page (Identification page)
• Extended temperature and voltage range – Up to 105 ℃, VCC from 1.7 V to 5.5 V
• High speed clock frequency – 20 MHz for VCC ≥ 4.5 V – 10 MHz for VCC ≥ 2.5 V – 5 MHz for VCC ≥ 1.7 V
• Schmitt trigger inputs for noise filtering
• Short Write cycle time – Byte Write within 4 ms – Page Write within 4 ms
• Write cycle endurance – 4 million Write cycles at 25 ℃ – 1.2 million Write cycles at 85 ℃ – 900 k Write cycles at 105 ℃
• Data retention – more than 50 years at 105 ℃ – 200 years at 55 ℃
• ESD Protection (Human Body Model) – 4000 V
• Packages – RoHS-compliant and halogen-free