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JSMSEMI IRFB7537PBF-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
IRFB7537PBF-JSM
LCSC Part #
C20606855
Packaging
TO-220-3
Customer #
Key Attributes
MOSFET 60V 180A TO-220-3
Datasheetpdf iconJSMSEMI IRFB7537PBF-JSM
In-Stock: 130
130 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.721$ 0.6489$ 0.65
10+$ 0.5797$ 0.5218$ 5.22
50+$ 0.5099$ 0.4590$ 22.95
100+$ 0.4401$ 0.3961$ 39.61
500+$ 0.3995$ 0.3596$ 179.80
1,000+$ 0.3768$ 0.3392$ 339.20
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-220-3
Drain to Source Voltage60V
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation358W
Reverse Transfer Capacitance (Crss@Vds)687pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)115nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

BSC039N06NS employs advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • Switch Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)