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JSMSEMI HUF75631S3S-JSMRoHS

Manufacturer
JSMSEMIAsian Brands
MPN
HUF75631S3S-JSM
LCSC Part #
C20606832
Packaging
TO-263-2L
Customer #
Key Attributes
MOSFET N-CH 100V 35A TO-263-2L
Datasheetpdf iconJSMSEMI HUF75631S3S-JSM
In-Stock: 81
81 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5446$ 0.54
10+$ 0.4417$ 4.42
30+$ 0.3911$ 11.73
100+$ 0.3388$ 33.88
500+$ 0.3088$ 154.40
800+$ 0.2929$ 234.32
Standard Packaging800/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-263-2L
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.331nF
Gate Charge(Qg)60nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

BSC0702LSATMA1 utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • Switch Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)