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YANGJIE MG200HF12TFC2 product image
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YANGJIE MG200HF12TFC2RoHS

Manufacturer
YANGJIEAsian Brands
MPN
MG200HF12TFC2
LCSC Part #
C20602001
Packaging
C2
Customer #
Key Attributes
1.25kW 200A 1.2kV C2 Single IGBTs RoHS
Datasheetpdf iconYANGJIE MG200HF12TFC2
In-Stock: 3
3 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 49.5014$ 49.50
30+$ 46.9413$ 1408.24
Standard Packaging6/Full Box
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerYANGJIE
PackagingC2
Pd - Power Dissipation1.25kW
Td(off)330ns
Td(on)290ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)500pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Vce Saturation(VCE(sat))2.1V
Collector Cut-Off Current (Ices)1mA
Switching Energy(Eoff)9.4mJ
Turn-On Energy (Eon)12.4mJ
Input Capacitance(Cies)12.8nF
Gate Charge(Qg)1.2uC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging6
Sales UnitPiece

Features

AI Translation
  • Low Vce(sat) achieved via trench technology
  • Especially low turn-off loss Eoff
  • Positive temperature coefficient of Vce(sat)
  • High short-circuit capability (10 µs)
  • Ultrafast soft-recovery anti-parallel freewheeling diode
  • Low package inductance
  • Maximum junction temperature 175℃

Applications

AI Translation
  • Motion/servo control
  • High-frequency switching applications
  • Uninterruptible power supplies (UPS)
  • Welding machines