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YANGJIE MG150HF12TFC2 product image
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YANGJIE MG150HF12TFC2RoHS

Manufacturer
YANGJIEAsian Brands
MPN
MG150HF12TFC2
LCSC Part #
C20601999
Packaging
C2
Customer #
Key Attributes
1.15kW 150A 1.2kV C2 Single IGBTs RoHS
Datasheetpdf iconYANGJIE MG150HF12TFC2

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerYANGJIE
PackagingC2
Pd - Power Dissipation1.15kW
Td(off)350ns
Td(on)325ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)500pF
Input Capacitance(Cies)11nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@4mA
Vce Saturation(VCE(sat))2.1V@150A,15V
Gate Charge(Qg)1.56uC
Switching Energy(Eoff)6.8mJ
Turn-On Energy (Eon)11.6mJ
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging6
Sales UnitPiece

Features

AI Translation
  • Low Vce(sat) via trench technology
  • Low switching losses, especially turn-off loss Eoff
  • Positive temperature coefficient of Vce(sat)
  • High short-circuit capability (10 µs)
  • Integrated ultra-fast soft-recovery anti-parallel freewheeling diode (FWD)
  • Low-inductance package
  • Maximum junction temperature 175°C

Applications

AI Translation
  • Motion/servo control
  • High-frequency switching applications
  • Uninterruptible power supplies (UPS)
  • Welding machines
In-Stock: 3
3 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 44.6924$ 44.69
30+$ 42.3808$ 1271.42
Standard Packaging6/Full Box
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