Nexperia BAS16DY-QX
| Manufacturer | |
| MPN | BAS16DY-QX |
| LCSC Part # | C20519625 |
| Packaging | 6-TSSOP |
| Customer # | |
| Key Attributes | 100V 110mA 855mV@10mA 6-TSSOP Diode Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | Nexperia | |
| Packaging | 6-TSSOP | |
| Reverse Leakage Current (Ir) | 500nA@80V | |
| Diode Configuration | - | |
| Pd - Power Dissipation | 260mW | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 100V | |
| Operating Junction Temperature Range | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 110mA | |
| Voltage - Forward(Vf@If) | 855mV@10mA |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
High-speed switching, galvanically isolated dual diode in ultra-compact SOT363 SMD plastic package.
Features
AI Translation
- High switching speed: trr ≤ 4 ns
- Low capacitance
- Low leakage current
- Reverse voltage: VR ≤ 100 V
- Repetitive peak reverse voltage: VRRM ≤ 100 V
- AEC-Q101 compliant, recommended for automotive applications
Applications
AI Translation
- High-speed switching
- General-purpose switching
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0559 | $ 0.06 |
| 200+ | $ 0.0224 | $ 4.48 |
| 500+ | $ 0.0216 | $ 10.80 |
| 1,000+ | $ 0.0212 | $ 21.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | Nexperia | |
| Packaging | 6-TSSOP | |
| Reverse Leakage Current (Ir) | 500nA@80V | |
| Diode Configuration | - | |
| Pd - Power Dissipation | 260mW | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 100V | |
| Operating Junction Temperature Range | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 110mA | |
| Voltage - Forward(Vf@If) | 855mV@10mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
High-speed switching, galvanically isolated dual diode in ultra-compact SOT363 SMD plastic package.
Features
AI Translation
- High switching speed: trr ≤ 4 ns
- Low capacitance
- Low leakage current
- Reverse voltage: VR ≤ 100 V
- Repetitive peak reverse voltage: VRRM ≤ 100 V
- AEC-Q101 compliant, recommended for automotive applications
Applications
AI Translation
- High-speed switching
- General-purpose switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

