MAXIM DS2016-150

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7V and 5.5V. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100ns when operated from a 5V power supply input and also provides relatively good performance of 250ns access while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density.

• Low-power CMOS design
• Standby current 50nA max at ambient temperature (tA) = +25℃ and supply voltage (VCC) = 3.0V; 100nA max at tA = +25℃ and VCC = 5.5V; 1μA max at tA = +60℃ and VCC = 5.5V
• Full operation for supply voltage (VCC) from 5.5V to 2.7V
• Data retention voltage from 5.5V to 2.0V
• Fast 5V access time
• Reduced-speed 3V access time
• Operating temperature range from -40℃ to +85℃
• Full static operation
• TTL compatible inputs and outputs over voltage range from 5.5V to 2.7V
• Available in 24-pin DIP and 24-pin SO packages
• Suitable for both battery operated and battery backup applications