ISSI IS46TR16128A-15HBLA1-TR

This article provides detailed information on 256Mx8 and 128Mx16 2Gb DDR3 SDRAM, covering its features such as standard voltage, low voltage, high-speed data transfer rates, 8 internal memory banks, 8n-bit prefetch architecture, and programmable CAS latency. It also describes various configuration, packaging, and refresh interval options, along with the DDR3 package pin layout and functional descriptions — including the reset and initialization process, with specific steps and requirements for the power-on initialization sequence.

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, - 0.067V, backward compatible with 1.5V
• High-speed data transfer rates, system frequency up to 933MHz
• 8 internal banks for concurrent operation
• 8n-bit prefetch architecture
• Programmable CAS latency
• Programmable additive latency: 0, CL - 1, CL - 2
• tCK-based programmable CAS write latency (CWL)
• Programmable burst length: 4 and 8
• Programmable burst sequence: sequential or interleaved
• Dynamic burst length switching
• Auto Self-Refresh (ASR)
• Self-Refresh Temperature (SRT)
• Configurations: 256Mx8, 128Mx16
• Package: 96-ball FBGA (9mm x 13mm) for x16, 78-ball FBGA (8mm x 10.5mm) for x8
• Refresh interval: 7.8μs (8192 cycles/64ms), Tc = - 40°C to 85°C; 3.9μs (8192 cycles/32ms), Tc = 85°C to 105°C
• Partial array self-refresh
• Asynchronous reset pin
• TDQS (Termination Data Strobe) support (x8 only)
• OCD (Off-Chip Driver impedance adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Write leveling calibration
• Up to 200MHz in DLL-off mode
• Operating temperature: Commercial (Tc = 0°C to + 95°C); Industrial (Tc = - 40°C to + 95°C); Automotive, A1 (Tc = - 40°C to + 95°C); Automotive, A2 (Tc = - 40°C to + 105°C)