RENESAS M3004316045NX0PBCR

The M3xxx316 is a Magnetoresistive Random Access Memory (MRAM) with storage densities ranging from 4Mbit to 32Mbit. MRAM technology is similar to flash memory technology, featuring SRAM-compatible 35ns/35ns and 45ns/45ns read/write timing (Persistent SRAM, P-SRAM), with data always remaining non-volatile — making MRAM a highly reliable and fast non-volatile memory solution.

MRAM is a true random access memory that allows random read and write operations throughout the memory array. It is well-suited for applications requiring data storage and retrieval without significant latency penalties, offering low latency, low power consumption, virtually unlimited endurance and data retention, high performance, and scalable memory technology.

The M3xxx316 is available in industrial (-40°C to 85°C) and industrial-plus (-40°C to 105°C) operating temperature ranges.

• Interface: Parallel Asynchronous x16
• Technology: 40nm pMTJ STT-MRAM
• Data Retention (see Table 16. Endurance and Data Retention Density): 4Mb, 8Mb, 16Mb, 32Mb
• Operating Voltage Range: VCC: 2.70V - 3.60V
• Operating Temperature Range: Industrial: -40°C to 85°C; Industrial Plus: -40°C to 105°C
• RoHS and REACH compliant
• Package: 44-pin TSOP (10mm×18mm); 54-pin TSOP (10mm×22mm); 48-ball FBGA (10mm×10mm)
• Memory Array Organization: 4Mbit: 262,144×16; 8Mbit: 524,288×16; 16Mbit: 1,048,576×16; 32Mbit: 2,097,152×16

• Suitable for applications requiring data storage and retrieval without significant latency penalty
• Factory automation
• Multifunction printers
• Industrial control and monitoring
• Medical diagnostics
• Data switches and routers
• Smart meters