VISHAY SI9634DY-T1-GE3
| Manufacturer | |
| MPN | SI9634DY-T1-GE3 |
| LCSC Part # | C20346103 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 8A SO-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.6W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.6W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Gen IV power MOSFET
- Fully lead (Pb)-free device
- Optimized Qg, Qgd, and Ω9d/Q9s ratio reduces switching related power loss
- 100 % Rg and UIS tested
Applications
AI Translation
- Synchronous rectification
- Load switch
- Motor drive control
- Battery management
In-Stock: 30
30 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5256 | $ 1.53 |
| 10+ | $ 1.5028 | $ 15.03 |
| 30+ | $ 1.4882 | $ 44.65 |
| 100+ | $ 1.4736 | $ 147.36 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.6W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.6W | |
| RDS(on) | 38mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Gen IV power MOSFET
- Fully lead (Pb)-free device
- Optimized Qg, Qgd, and Ω9d/Q9s ratio reduces switching related power loss
- 100 % Rg and UIS tested
Applications
AI Translation
- Synchronous rectification
- Load switch
- Motor drive control
- Battery management
C20346103 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



