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TOSHIBA SSM6P816R,LF product image
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TOSHIBA SSM6P816R,LFRoHS

Manufacturer
MPN
SSM6P816R,LF
LCSC Part #
C20247106
Packaging
TSOP-6-F
Customer #
Key Attributes
6A 1.4W 52.3mΩ@1.8V 1V TSOP-6-F FET, MOSFET Arrays RoHS
Datasheetpdf iconTOSHIBA SSM6P816R,LF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTOSHIBA
PackagingTSOP-6-F
Current - Continuous Drain(Id)6A
Pd - Power Dissipation1.4W
RDS(on)52.3mΩ@1.8V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)94pF
Input Capacitance(Ciss)1.03nF
Gate Charge(Qg)16.6nC@4.5V
Output Capacitance(Coss)113pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

Leadless ultra-compact DFN0603-3 (SOT8013) SMD N-channel enhancement-mode FET utilizing trench MOSFET technology.

Features

AI Translation
  • 1.8V drive
  • Low on-resistance:
    • RDS(ON) = 36.0 mΩ (typical) (VGS = -1.8V)
    • RDS(ON) = 28.0 mΩ (typical) (VGS = -2.5V)
    • RDS(ON) = 23.0 mΩ (typical) (VGS = -4.5V)

Applications

AI Translation
  • Power management switch
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.339$ 0.34
200+$ 0.1353$ 27.06
500+$ 0.1308$ 65.40
1,000+$ 0.1286$ 128.60
Standard Packaging3000/Full Reel
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