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Infineon IKZA75N120CH7XKSA1RoHS

Manufacturer
Infineon
MPN
IKZA75N120CH7XKSA1
LCSC Part #
C20191537
Packaging
TO-247-4
Customer #
Key Attributes
IGBT 1.2kV 109A TO-247-4
Datasheetpdf iconInfineon IKZA75N120CH7XKSA1
In-Stock: 3
3 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 10.273$ 10.27
10+$ 8.8083$ 88.08
30+$ 7.9164$ 237.49
90+$ 7.1677$ 645.09
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-4
Td(off)38ns
Pd - Power Dissipation549W
Td(on)15ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)109A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)193nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1.2mA
Gate Charge(Qg)550nC@75A,15V
Vce Saturation(VCE(sat))2.15V@75A,15V
Reverse Recovery Time(trr)95ns
Switching Energy(Eoff)1.76mJ
Turn-On Energy (Eon)2.01mJ
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • VCE = 1200 V
  • ∂C = 75 A
  • Maximum junction temperature Tvjmax = 175°C
  • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and sof-commutating high speed diode
  • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C
  • Optimized for high eficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
  • Easy paralleling capability due to positive temperature coeficient in VCEsat
  • Pb-free lead plating; RoHS compliant

Applications

AI Translation
  • Industrial UPS
  • EV-Charging
  • String inverter
  • Welding