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onsemi FDC655BNRoHS

Manufacturer
onsemi
MPN
FDC655BN
LCSC Part #
C201758
Packaging
SSOT-6
Customer #
Key Attributes
MOSFET N-CH 30V 6.3A SSOT-6
Datasheetpdf icononsemi FDC655BN

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSSOT-6
Drain to Source Voltage30V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)6.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)33mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)620pF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applicatoins where low in-line power loss and fast switching are required.

Features

AI Translation
  • Max rDS(on)=25 mΩ at VGS=10 V, ID=6.3 A
  • Max rDS(on)=33 mΩ at VGS=4.5 V, ID=5.5 A
  • Fast switching
  • Low gate charge
  • High performance trchnology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant
In-Stock: 2,325
2,325 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2406$ 1.20
50+$ 0.2078$ 10.39
150+$ 0.1937$ 29.06
500+$ 0.1762$ 88.10
3,000+$ 0.1684$ 505.20
6,000+$ 0.1637$ 982.20
Standard Packaging3000/Full Reel
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