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R+O FDV301NRoHS

Manufacturer
R+OAsian Brands
MPN
FDV301N
LCSC Part #
C20069151
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 25V 220mA SOT-23
Datasheetpdf iconR+O FDV301N
In-Stock: 23,570
23,570 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
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QtyUnit PriceTotal Amount
10+$ 0.0353$ 0.35
100+$ 0.0317$ 3.17
300+$ 0.0298$ 8.94
3,000+$ 0.0264$ 79.20
6,000+$ 0.0253$ 151.80
9,000+$ 0.0248$ 223.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-23
Drain to Source Voltage25V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)220mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)4Ω@4.5V;5Ω@2.7V
Number1 N-channel
Input Capacitance(Ciss)9.5pF
Gate Charge(Qg)490pC@4.5V
TypeN-Channel
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Features

AI Translation
  • Drain-Source Voltage (VDS) = 25 V
  • Drain Current (ID) = 0.22 A
  • On-Resistance (RDS(on)) < 4.0 Ω at Gate-Source Voltage (VGS) = 4.5 V
  • On-Resistance (RDS(on)) < 5.0 Ω at Gate-Source Voltage (VGS) = 2.7 V
  • Trench power medium-voltage MOSFET technology
  • Voltage-controlled small-signal switching
  • Fast switching speed

Applications

AI Translation
  • Battery-powered systems
  • Solid-state relays
  • Direct logic-level interface: TTL/CMOS