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R+O 2SK3018RoHS

Manufacturer
R+OAsian Brands
MPN
2SK3018
LCSC Part #
C20069148
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 100mA SOT-23
Datasheetpdf iconR+O 2SK3018
In-Stock: 141,040
141,040 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
20+$ 0.0283$ 0.57
200+$ 0.023$ 4.60
600+$ 0.0201$ 12.06
3,000+$ 0.0161$ 48.30
9,000+$ 0.0146$ 131.40
21,000+$ 0.0138$ 289.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)9pF
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation200mW
RDS(on)8Ω@4V;13Ω@2.5V
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)13pF
TypeN-Channel
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Features

AI Translation
  • Drain-source voltage VDS = 30V
  • Drain current ID = 0.1A
  • On-resistance RDS(on) < 8Ω at gate-source voltage VGS = 4V
  • On-resistance RDS(on) < 13Ω at gate-source voltage VGS = 2.5V
  • Trench power low-voltage MOSFET technology
  • High-density cell design for low on-resistance RDS(on)
  • High-speed switching

Applications

AI Translation
  • Interface connection
  • Load switch