Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 60 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 6V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 60 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Power dissipation of 500 mW
- High stability and high reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
In-Stock: 18,750
18,750 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0729 | $ 0.73 |
| 100+ | $ 0.0598 | $ 5.98 |
| 300+ | $ 0.0533 | $ 15.99 |
| 1,000+ | $ 0.0444 | $ 44.40 |
| 5,000+ | $ 0.0405 | $ 202.50 |
| 10,000+ | $ 0.0385 | $ 385.00 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 60 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | R+O | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 6V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 60 | |
| Pd - Power Dissipation | 500mW | |
| Current - Collector(Ic) | 3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Power dissipation of 500 mW
- High stability and high reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C
C20069128 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



