onsemi NVMJD4D7N04CLTWG
| Manufacturer | |
| MPN | NVMJD4D7N04CLTWG |
| LCSC Part # | C20047247 |
| Packaging | - |
| Customer # | |
| Key Attributes | 78A 4.7mΩ@10V 25W 2.2V FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 78A | |
| RDS(on) | 4.7mΩ@10V | |
| Pd - Power Dissipation | 25W | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 23nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 78A | |
| RDS(on) | 4.7mΩ@10V | |
| Pd - Power Dissipation | 25W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 23nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low RDS(on) for minimized conduction losses
- Low QG and capacitance for minimized driving losses
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.1575 | $ 2.16 |
| 200+ | $ 0.8608 | $ 172.16 |
| 500+ | $ 0.8332 | $ 416.60 |
| 1,000+ | $ 0.8186 | $ 818.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 78A | |
| RDS(on) | 4.7mΩ@10V | |
| Pd - Power Dissipation | 25W | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 23nC@10V | |
| Operating Temperature | -55℃~+175℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 78A | |
| RDS(on) | 4.7mΩ@10V | |
| Pd - Power Dissipation | 25W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 23nC@10V | |
| Operating Temperature | -55℃~+175℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low RDS(on) for minimized conduction losses
- Low QG and capacitance for minimized driving losses
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

