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onsemi NTMFD1D6N03P8RoHS

Manufacturer
onsemi
MPN
NTMFD1D6N03P8
LCSC Part #
C20047225
Packaging
PQFN-8(5x6)
Customer #
Key Attributes
109A 29W 5mΩ@10V 3V PQFN-8(5x6) FET, MOSFET Arrays RoHS
Datasheetpdf icononsemi NTMFD1D6N03P8
In-Stock: 30
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QtyUnit PriceTotal Amount
1+$ 3.8407$ 3.84
10+$ 3.7773$ 37.77
30+$ 3.7351$ 112.05
100+$ 3.6912$ 369.12
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingPQFN-8(5x6)
Current - Continuous Drain(Id)109A
Pd - Power Dissipation29W
RDS(on)5mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)115pF
Input Capacitance(Ciss)6.43nF
Gate Charge(Qg)87nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)1.695nF
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Introduction

AI Translation

This device integrates two dedicated N-channel MOSFETs in a dual package. The switching nodes are internally connected to simplify layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous rectifier MOSFET (Q2) are designed for optimal power efficiency.

Features

AI Translation
  • Q1: N-channel
  • Maximum rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
  • Maximum rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A
  • Q2: N-channel
  • Maximum rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A
  • Maximum rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A
  • Low-inductance package for reduced rise/fall times and lower switching losses
  • Integrated MOSFETs for optimized layout, reduced circuit inductance, and minimized switching node ringing
  • Lead-free, halogen-free/brominated flame retardant-free, and RoHS compliant

Applications

AI Translation
  • Computing
  • Communications
  • General point-of-load applications