Tagore Technology TSL8329M

The TSL8329M is a dual-channel, integrated RF, frontend, multichip module designed for different applications. The device operates from 2.0 GHz to 4.2GHz. The TSL8329M is configured in dual channels with a cascading, two-stage, LNA and a high GaN based SPDT switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 35 dBm (typical) at high gain mode. In low gain mode, one stage of the two-stage LNA is in bypass, providing 13 dB of gain at a lower current of 45 mA. In power-down mode, the LNAs are turned off and the device draws 5 mA.

In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides low insertion loss of 0.45 dB at 3.6GHz and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.

The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP.

• Integrated dual-channel RF front end
• 2-stage LNA and GaN SPDT switch
• On-chip bias and matching
• Single-supply operation
• Gain @ 3.6GHz: 32dB (High Gain mode) @ 3.6GHz: 13dB (Low Gain mode)
• NF @ 3.6GHz: 1.0dB (High Gain mode) @ 3.6GHz: 0.9dB (Low Gain mode)
• OP1dB @ 3.6GHz: 20dBm (High Gain mode) @ 3.6GHz: 10.5dBm (Low Gain mode)
• Operating frequency: 2.0 to 4.2GHz
• High Isolation: RXOUT-CHA & RXOUT-CHB: 40 dB typical; TERM-CHA and TERM-CHB: 55 dB typical
• Insertion loss @ 3600MHz: 0.45dB (TX mode)
• High power handling at TCASE = 105°C Full lifetime; LTE average power (9 dB PAR): 43 dBm
• High OIP3 (high gain mode): 35 dBm typical
• High gain mode current: 90 mA typical at 5 V
• Low gain mode current: 45 mA typical at 5 V
• Power-down mode current: 5 mA typical at 5 V
• Positive logic control
• 6 mm × 6 mm, 40-lead LFCSP

• 4G/5G Infrastructure Radios
• Small Cells and Cellular Repeaters
• SDARS