DIODES DMTH10H032LPDW-13
| Manufacturer | |
| MPN | DMTH10H032LPDW-13 |
| LCSC Part # | C19950003 |
| Packaging | PowerDI5060-8(TYPEUxD) |
| Customer # | |
| Key Attributes | 24A 37W 50mΩ@4.5V 2.5V 1 N-channel PowerDI5060-8(TYPEUxD) FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8(TYPEUxD) | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 165pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 24A | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 50mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 683pF | |
| Gate Charge(Qg) | 11.9nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8(TYPEUxD) | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 165pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 24A | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 50mΩ@4.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 683pF | |
| Gate Charge(Qg) | 11.9nC@10V | |
| Vgs | ±20V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET features low on-resistance and fast switching characteristics, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Rated up to +175°C for high ambient temperature environments
- 100% unclamped inductive switching (UIS) tested during production for enhanced reliability and durability in end applications
- Low input capacitance
- Fast switching speed
- Solderable flanks for optical inspection
- Additional tinning on sidewall pads for optical soldering inspection
- Lead-free surface finish, RoHS compliant
- Halogen- and antimony-free "green" device
Applications
AI Translation
- DC-DC Converters - Motors
In-Stock: 146
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5888 | $ 3.59 |
| 10+ | $ 3.1778 | $ 31.78 |
| 30+ | $ 2.9211 | $ 87.63 |
| 100+ | $ 2.6579 | $ 265.79 |
| 500+ | $ 2.5393 | $ 1269.65 |
| 1,000+ | $ 2.4873 | $ 2487.30 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8(TYPEUxD) | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 165pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 24A | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 50mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 683pF | |
| Gate Charge(Qg) | 11.9nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8(TYPEUxD) | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 165pF | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 24A | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 50mΩ@4.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 100V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 683pF | |
| Gate Charge(Qg) | 11.9nC@10V | |
| Vgs | ±20V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET features low on-resistance and fast switching characteristics, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Rated up to +175°C for high ambient temperature environments
- 100% unclamped inductive switching (UIS) tested during production for enhanced reliability and durability in end applications
- Low input capacitance
- Fast switching speed
- Solderable flanks for optical inspection
- Additional tinning on sidewall pads for optical soldering inspection
- Lead-free surface finish, RoHS compliant
- Halogen- and antimony-free "green" device
Applications
AI Translation
- DC-DC Converters - Motors
C19950003 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

