DIODES DMT8008LFG-13
| Manufacturer | |
| MPN | DMT8008LFG-13 |
| LCSC Part # | C19949998 |
| Packaging | - |
| Customer # | |
| Key Attributes | 80V 48A 2.5V 23.5W 10.4mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 48A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 23.5W | |
| RDS(on) | 10.4mΩ@4.5V | |
| Gate Charge(Qg) | 37.7nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) — minimized conduction losses
- Excellent Qgd × RDS(ON) figure of merit (FOM)
- Advanced technology optimized for DC-DC converters
- Small, thermally efficient package for higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- 100% Unclamped Inductive Switching (UIS) tested during production — enhanced reliability and durability in end applications
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free. "Green" device
Applications
AI Translation
- Backlight Illumination - Power Management Functions - DC-DC Converter
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.3852 | $ 1.39 |
| 200+ | $ 0.5529 | $ 110.58 |
| 500+ | $ 0.5347 | $ 267.35 |
| 1,000+ | $ 0.5256 | $ 525.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | - | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 48A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 23.5W | |
| RDS(on) | 10.4mΩ@4.5V | |
| Gate Charge(Qg) | 37.7nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) — minimized conduction losses
- Excellent Qgd × RDS(ON) figure of merit (FOM)
- Advanced technology optimized for DC-DC converters
- Small, thermally efficient package for higher-density end products
- Occupies only 33% of the board area of an SO-8 package, enabling smaller end products
- 100% Unclamped Inductive Switching (UIS) tested during production — enhanced reliability and durability in end applications
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free. "Green" device
Applications
AI Translation
- Backlight Illumination - Power Management Functions - DC-DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

