DIODES DMT4008LFDF-13
| Manufacturer | |
| MPN | DMT4008LFDF-13 |
| LCSC Part # | C19949993 |
| Packaging | UDFN2020-6 |
| Customer # | |
| Key Attributes | 40V 11.8A 3V 2W 15.5mΩ@4.5V N-Channel UDFN2020-6 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 11.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 15.5mΩ@4.5V | |
| Gate Charge(Qg) | 17.1nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) – Ensures on state losses are minimized
- Excellent Qgd×RDS(ON) Product (FOM)
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm²
- Low Gate Threshold Voltage
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- DC-DC Converters
- Backlighting
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.524 | $ 0.52 |
| 200+ | $ 0.2096 | $ 41.92 |
| 500+ | $ 0.2021 | $ 101.05 |
| 1,000+ | $ 0.199 | $ 199.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 11.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 15.5mΩ@4.5V | |
| Gate Charge(Qg) | 17.1nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low RDS(ON) – Ensures on state losses are minimized
- Excellent Qgd×RDS(ON) Product (FOM)
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm²
- Low Gate Threshold Voltage
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Power Management Functions
- DC-DC Converters
- Backlighting
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

