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DIODES DMT35M8LDG-7 product image
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DIODES DMT35M8LDG-7RoHS

Manufacturer
DIODES
MPN
DMT35M8LDG-7
LCSC Part #
C19949992
Packaging
-
Customer #
Key Attributes
17A 4.7mΩ@10V 2W 1.9V FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMT35M8LDG-7
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9984$ 1.00
200+$ 0.3994$ 79.88
500+$ 0.3854$ 192.70
1,000+$ 0.3793$ 379.30
Standard Packaging2000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
Packaging-
Current - Continuous Drain(Id)17A
RDS(on)4.7mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
TypeN-Channel
Gate Charge(Qg)22.7nC@10V
Operating Temperature-55℃~+150℃
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Introduction

AI Translation

This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • 100% Unclamped Inductive Switching (UIS) tested in production
  • Low R<sub>DS(ON)</sub> — minimizes conduction losses
  • Fast switching speed — minimizes switching losses
  • Fully lead-free and fully RoHS compliant
  • Halogen- and antimony-free. "Green" device

Applications

AI Translation
  • Power Management Features