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DIODES DMT32M6LDG-13 product image
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DIODES DMT32M6LDG-13RoHS

Manufacturer
DIODES
MPN
DMT32M6LDG-13
LCSC Part #
C19949989
Packaging
-
Customer #
Key Attributes
47A 3.6mΩ@4.5V 1.7W 2.2V FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMT32M6LDG-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.6397$ 1.64
200+$ 0.6556$ 131.12
500+$ 0.6334$ 316.70
1,000+$ 0.6223$ 622.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
Packaging-
Current - Continuous Drain(Id)47A
RDS(on)3.6mΩ@4.5V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel
Gate Charge(Qg)31.7nC@10V
Operating Temperature-55℃~+150℃
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Introduction

AI Translation

This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Dual P-channel MOSFET
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Gate ESD protection
  • Fully lead-free and fully RoHS compliant
  • Halogen- and antimony-free, "Green" device
  • Suitable for automotive applications requiring specific change control; device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities

Applications

AI Translation
  • Power Management Features