DIODES DMP32D9UDAQ-7B
| Manufacturer | |
| MPN | DMP32D9UDAQ-7B |
| LCSC Part # | C19949952 |
| Packaging | X2-DFN0806-6 |
| Customer # | |
| Key Attributes | 220mA 360mW 10Ω@1.5V 1V X2-DFN0806-6 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | X2-DFN0806-6 | |
| Current - Continuous Drain(Id) | 220mA | |
| Pd - Power Dissipation | 360mW | |
| RDS(on) | 10Ω@1.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Gate Charge(Qg) | 350pC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Ultra-low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Ultra-compact SMT package 0.8mm x 0.6mm
- Gate ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; this product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility.
Applications
AI Translation
- General-purpose interface switch
- Power management function
- Analog switch
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1003 | $ 0.10 |
| 200+ | $ 0.0401 | $ 8.02 |
| 500+ | $ 0.0387 | $ 19.35 |
| 1,000+ | $ 0.0381 | $ 38.10 |
Standard Packaging10000/Full Bag | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | X2-DFN0806-6 | |
| Current - Continuous Drain(Id) | 220mA | |
| Pd - Power Dissipation | 360mW | |
| RDS(on) | 10Ω@1.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Gate Charge(Qg) | 350pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Ultra-low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Ultra-compact SMT package 0.8mm x 0.6mm
- Gate ESD protection
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; this product is AEC-Q101 qualified, PPAP capable, and manufactured in an IATF 16949 certified facility.
Applications
AI Translation
- General-purpose interface switch
- Power management function
- Analog switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

