DIODES DMP2900UVQ-13
| Manufacturer | |
| MPN | DMP2900UVQ-13 |
| LCSC Part # | C19949929 |
| Packaging | SOT-563 |
| Customer # | |
| Key Attributes | 850mA 1.5Ω@1.8V 800mW 1V SOT-563 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 850mA | |
| RDS(on) | 1.5Ω@1.8V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 12pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 850mA | |
| RDS(on) | 1.5Ω@1.8V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 12pF |
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Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual P-channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; compliant with AEC-Q101, PPAP-capable, and manufactured in an IATF 16949 certified facility
Applications
AI Translation
-DC-DC Converter - Load Switch - Power Management Function
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2499 | $ 0.25 |
| 200+ | $ 0.0998 | $ 19.96 |
| 500+ | $ 0.0964 | $ 48.20 |
| 1,000+ | $ 0.0948 | $ 94.80 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 850mA | |
| RDS(on) | 1.5Ω@1.8V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 12pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 850mA | |
| RDS(on) | 1.5Ω@1.8V | |
| Pd - Power Dissipation | 800mW | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 20V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| Input Capacitance(Ciss) | 49pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 12pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Dual P-channel MOSFET
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
- Suitable for automotive applications requiring specific change control; compliant with AEC-Q101, PPAP-capable, and manufactured in an IATF 16949 certified facility
Applications
AI Translation
-DC-DC Converter - Load Switch - Power Management Function
C19949929 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

