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DIODES DMN52D0UVA-7 product image
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DIODES DMN52D0UVA-7RoHS

Manufacturer
DIODES
MPN
DMN52D0UVA-7
LCSC Part #
C19949889
Packaging
SOT-563
Customer #
Key Attributes
480mA 4Ω@1.8V 480mW 1V SOT-563 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN52D0UVA-7
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.2398$ 0.24
200+$ 0.0957$ 19.14
500+$ 0.0925$ 46.25
1,000+$ 0.091$ 91.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-563
Current - Continuous Drain(Id)480mA
RDS(on)4Ω@1.8V
Pd - Power Dissipation480mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage50V
TypeN-Channel
Gate Charge(Qg)1.5nC@10V
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Introduction

AI Translation

This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Dual N-channel MOSFET
  • Low on-resistance
  • Very low gate threshold voltage, 1.0V maximum
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • Ultra-compact surface mount package
  • ESD protection
  • Fully lead-free and RoHS compliant
  • Halogen and antimony free, "Green" device

Applications

AI Translation
  • Battery Management System
  • Power Management Function
  • Load Switch