DIODES DMN33D8LVQ-7
| Manufacturer | |
| MPN | DMN33D8LVQ-7 |
| LCSC Part # | C19949867 |
| Packaging | SOT-563 |
| Customer # | |
| Key Attributes | 350mA 7Ω@2.5V 430mW 1.5V SOT-563 FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 350mA | |
| RDS(on) | 7Ω@2.5V | |
| Pd - Power Dissipation | 430mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 1.23nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 350mA | |
| RDS(on) | 7Ω@2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 430mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 1.23nC@10V |
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Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Electrostatic protected gate
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
Applications
AI Translation
- Motor control
- Power management
- DC-DC converter
- Backlight source
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2315 | $ 0.23 |
| 200+ | $ 0.0924 | $ 18.48 |
| 500+ | $ 0.0893 | $ 44.65 |
| 1,000+ | $ 0.0878 | $ 87.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 350mA | |
| RDS(on) | 7Ω@2.5V | |
| Pd - Power Dissipation | 430mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 1.23nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Current - Continuous Drain(Id) | 350mA | |
| RDS(on) | 7Ω@2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 430mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel | |
| Gate Charge(Qg) | 1.23nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Electrostatic protected gate
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
Applications
AI Translation
- Motor control
- Power management
- DC-DC converter
- Backlight source
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

