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DIODES DMN32D0LV-13 product image
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DIODES DMN32D0LV-13RoHS

Manufacturer
DIODES
MPN
DMN32D0LV-13
LCSC Part #
C19949859
Packaging
SOT-563
Customer #
Key Attributes
680mA 480mW 1.5Ω@2.5V 1.2V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN32D0LV-13
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.0797$ 0.08
200+$ 0.0318$ 6.36
500+$ 0.0308$ 15.40
1,000+$ 0.0302$ 30.20
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-563
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)4.6pF
Configuration-
Current - Continuous Drain(Id)680mA
Pd - Power Dissipation480mW
RDS(on)1.5Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number2 N-Channel
Input Capacitance(Ciss)44.8pF
Gate Charge(Qg)620pC@4.5V
Vgs±10V
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Introduction

AI Translation

This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Dual N-Channel MOSFET
  • Low on-resistance
  • Ultra-low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • Ultra-compact surface mount package
  • Fully lead-free and RoHS compliant
  • Halogen- and antimony-free, "Green" device
  • Compliant with JEDEC standards (as referenced in AEC-Q) with high reliability

Applications

AI Translation
  • High-efficiency power management applications